Manipulation of Atomic Ordering for Manufacturing Semiconductors (μ-ATOMS)

Director

Fisher Yu

Lead Institution

University of Arkansas

Class

2022-2026

Mission

To discover the underlying science principles determining the ordering of atoms in semiconductor alloys.

Partner Institutions

Univ of Arkansas
SNL-NM
George Washington
Rensselaer Polytech
Dartmouth
Stanford
UC Berkeley
Arizona State
Univ of Delaware
Univ of Arkansas - Pine Bluff

Quick Facts

Single Slide Overview
Technical Summary
https://efrc.uark.edu/

BES Staff Contact

Aaron Holder

Grand Challenges Addressed

Transformative Opportunities Addressed

Mastering Hierarchical Architectures and Beyond-Equilibrium Matter

Trans. Opp. #1

Understanding the Critical Roles of Heterogeneity, Interfaces, and Disorder

Trans. Opp. #2

Revolutionary Advances in Models, Mathematics, Algorithms, Data, and Computing

Trans. Opp. #4

Exploiting Transformative Advances in Imaging Capabilities across Multiple Scales

Trans. Opp. #5

BES Reports Addressed

Highlights

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Applying a voltage to lanthanum strontium manganite (LSMO) can cause it to separate into distinct regions with dramatically different magnetic properties, as illustrated by the red and blue colors in the above figure.

Tuning Magnetism With Voltage Opens a New Path to Neuromorphic Circuits

Experiments show that applied voltage can dramatically alter the magnetic properties of quantum materials.

A metallic line atop a medium biased at the edge of chaos can provide effective negative resistance for time-varying signals, outputting a larger signal compared to its input. The energy for amplification comes from the static bias applied to the medium.

The “Edge of Chaos” Amplifies Signals Without Transistors

Emulating the edge of chaos of axons enables a metal wire to overcome its resistance without cooling, thereby amplifying signals flowing inside of it.