Center for 3D Ferroelectric Microelectronics (3DFeM2)

Director

Susan Trolier-McKinstry

Lead Institution

Pennsylvania State University

Class

2020-2028 (Center known as 3DFEM prior to 2024)

Mission

To integrate ferroelectric films at the required scale and reliability for 3D memory using next generation manufacturing practices.

Partner Institutions

Pennsylvania State University
Brookhaven National Laboratory
Carnegie Mellon University
Georgia Institute of Technology
Oak Ridge National Laboratory
Sandia National Laboratories
University of Maryland
University of Notre Dame
University of Pennsylvania
University of Tennessee
University of Virginia

Quick Facts

Single Slide Overview
Technical Summary
https://3dfem.psu.edu/

BES Staff Contact

Claudia Cantoni

Aaron Holder

Grand Challenges Addressed

Transformative Opportunities Addressed

Understanding the Critical Roles of Heterogeneity, Interfaces, and Disorder

Trans. Opp. #2

Revolutionary Advances in Models, Mathematics, Algorithms, Data, and Computing

Trans. Opp. #4

BES Reports Addressed

Highlights

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Applying a voltage to lanthanum strontium manganite (LSMO) can cause it to separate into distinct regions with dramatically different magnetic properties, as illustrated by the red and blue colors in the above figure.

Tuning Magnetism With Voltage Opens a New Path to Neuromorphic Circuits

Experiments show that applied voltage can dramatically alter the magnetic properties of quantum materials.

A metallic line atop a medium biased at the edge of chaos can provide effective negative resistance for time-varying signals, outputting a larger signal compared to its input. The energy for amplification comes from the static bias applied to the medium.

The “Edge of Chaos” Amplifies Signals Without Transistors

Emulating the edge of chaos of axons enables a metal wire to overcome its resistance without cooling, thereby amplifying signals flowing inside of it.